Sputter-induced grain boundary junctions in YBa2Cu307-x thin films on MgO

نویسندگان

  • B. V. Vuchic
  • K. A. Dean
  • D. B. Buchholz
  • R. P. H. Chang
چکیده

A low voltage argon ion sputter technique was used to form grain boundary junctions in YBa2Cu307-, thin films on MgO. The YBa2Cu307--x thin film grown on a pre-sputtered region of MgO was rotated 45’ about the [OOl] axis relative to the YBa.&!u,O,-, thin film grown on an adjacent unsputtered region of the substrate. YBazCu,07-. thin films were grown using pulsed organometallic beam epitaxy (POMBE). The current-voltage and resistance-temperature characteristics of individual grain boundary junctions demonstrated weak-link-type behavior. Sputter-induced 45” grain boundary junctions are advantageous in device applications because they are planar and simple to form in many configurations.

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تاریخ انتشار 1999